報告時間：5月8日 周三 上午10:00
報告題目： Ge-based Photodetectors, Advanced Nano-electronic Devices, and Their Integration Platform to Enable Future Opto-Eletronic Integrated Circuits
The first part of this talk will focus on the recent progress of various Germanium-Tn (GeSn)-based photodetectors for 2 μm wavelength band which has emerged as a promising candidate for next communication window, extending operation wavelengths of current communication systems from near infrared range (NIR) of around 1.31 or 1.55 μm to short-wave infrared range (SWIR). In order to explore the full potential of photodetectors, heterogeneous integration of them with advanced nano-electronic devices to realize optoelectronic integrated circuits (OEICs) is highly desired. Therefore, in the second part of the talk, I will have a brief review on the recent development of advanced nano-electronic devices and approaches of 3D heterogeneous integration of electronic components with different functionalities. To leverage on such integration to realize chip-based systems for quantum application would also be discussed.
Dr. Gong Xiao has been an Assistant Professor in the ECE Department of the National University of Singapore (NUS) since January, 2017. He obtained his Ph. D Degree from NUS. He was also a Visiting Scientist at MIT in the year of 2014. His research interest includes advanced transistors for logic and RF applications, emerging memories, photodetectors, and heterogeneous integration of nano-electronic and photonic devices for 5G, quantum commination, and artificial intelligence. He is the Bronze medal winner at the 6th TSMC Outstanding Student Researcher Award. He has ~150 publications in international journals and conferences, including more than 20 invited talks and 30 papers in the IEDM, VLSI Symposium, OFC, and CLEO. His work has been widely reported by various high-profile magazines such as IEEE Spectrum, Compound Semiconductors, and Semiconductor Today.